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INITIAL RESULTS FOR INGAAS FILMS GROWN ON INGAAS SUBSTRATES

被引：2
作者：
HOKE, WE
LYMAN, PS
CARTER, JR
HENDRIKS, HT
BONNER, WA
LENT, B
机构：
[1] CRYSTALLOD,MARTINSVILLE,NJ 08836
[2] CRYSTAR RES INC,VICTORIA,BC V8Z 3B6,CANADA
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1995年 / 13卷 / 02期
关键词：
D O I：
10.1116/1.587940
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
InGaAs films have been deposited on semi-insulating InxGa1-xAs (x=0.04-0.05) substrates with improved material properties compared to similar InGaAs films grown on GaAs substrates. For near lattice matched conditions the films grown on InGaAs substrates have a smooth surface morphology compared to a dislocation-induced cross hatch morphology on GaAs substrates. The resulting film double crystal x-ray linewidths are considerably narrower. The InGaAs film photoluminescence intensity is stronger with a narrower x-ray linewidth due to the elimination of lattice mismatch dislocations. Also the Hall mobilities are higher for the films grown on InGaAs substrates.
引用
收藏
页码：678 / 680
页数：3
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