BAND-OFFSET AT P-ZNTE P-ZNSE HETEROINTERFACE

被引：6

作者：

UKITA, M

HIEI, F

NAKANO, K

ISHIBASHI, A

机构：

[1] Sony Corporation Research Center, Hodogaya-ku, Yokohama 240

来源：

APPLIED PHYSICS LETTERS | 1995年 / 66卷 / 02期

关键词：

D O I：

10.1063/1.113136

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have estimated the valence band discontinuity ΔEV at the p-ZnSe/p-ZnTe interface by means of electrical measurements. From capacitance-voltage measurement of a Schottky-like barrier at the heterojunction, ΔEV∼0.8 eV is found. The current-voltage characteristics of the junctions, however, suggest smaller values for ΔEV. The likely origin of this difference is leakage paths of the current in the barrier at the junction. © 1995 American Institute of Physics.

引用

页码：209 / 211

页数：3

共 13 条

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