BAND-OFFSET AT P-ZNTE P-ZNSE HETEROINTERFACE

被引:6
作者
UKITA, M
HIEI, F
NAKANO, K
ISHIBASHI, A
机构
[1] Sony Corporation Research Center, Hodogaya-ku, Yokohama 240
关键词
D O I
10.1063/1.113136
中图分类号
O59 [应用物理学];
学科分类号
摘要
We have estimated the valence band discontinuity ΔEV at the p-ZnSe/p-ZnTe interface by means of electrical measurements. From capacitance-voltage measurement of a Schottky-like barrier at the heterojunction, ΔEV∼0.8 eV is found. The current-voltage characteristics of the junctions, however, suggest smaller values for ΔEV. The likely origin of this difference is leakage paths of the current in the barrier at the junction. © 1995 American Institute of Physics.
引用
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页码:209 / 211
页数:3
相关论文
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