ADDITIONAL P3/2 AND P1/2 INFRARED EXCITED-STATE LINES OF GALLIUM AND INDIUM IN SILICON

被引：16

作者：

ROME, JJ

SPRY, RJ

CHANDLER, TC

BROWN, GJ

COVINGTON, BC

HARRIS, RJ

机构：

[1] SAM HOUSTON STATE UNIV,DEPT PHYS,HUNTSVILLE,TX 77341

[2] UNIV DAYTON,RES INST,DAYTON,OH 45469

来源：

PHYSICAL REVIEW B | 1982年 / 25卷 / 06期

关键词：

D O I：

10.1103/PhysRevB.25.3615

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：3615 / 3618

页数：4

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