TOWARDS UNDERSTANDING PERSISTENT PHOTOCONDUCTANCE IN DOPING MODULATED AMORPHOUS-SILICON

被引：9

作者：

HAMED, A

FRITZSCHE, H

机构：

来源：

PHILOSOPHICAL MAGAZINE LETTERS | 1989年 / 60卷 / 04期

关键词：

D O I：

10.1080/09500838908206453

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：171 / 175

页数：5

共 15 条

[1] PERSISTENT PHOTOCONDUCTIVITY IN DOPING-MODULATED MULTILAYERS AND COMPENSATED THIN-FILMS OF HYDROGENATED AMORPHOUS-SILICON [J].

AGARWAL, SC ;

GUHA, S .

PHYSICAL REVIEW B, 1985, 32 (12) :8469-8472

[2] DOPING AND ANNEALING EFFECTS ON PERSISTENT PHOTOCONDUCTIVITY IN DOPING-MODULATED AMORPHOUS-SILICON SUPERLATTICES [J].

CHOI, SH ;

YOO, BS ;

LEE, CC ;

JANG, J .

PHYSICAL REVIEW B, 1987, 36 (12) :6479-6485

[3] MODEL FOR PERSISTENT PHOTOCONDUCTIVITY IN DOPING-MODULATED AMORPHOUS-SILICON SUPERLATTICES [J].

HUNDHAUSEN, M ;

LEY, L .

PHYSICAL REVIEW B, 1985, 32 (10) :6655-6662

[4] EVIDENCE FOR HYDROGEN MOTION IN ANNEALING OF LIGHT-INDUCED METASTABLE DEFECTS IN HYDROGENATED AMORPHOUS-SILICON [J].

JACKSON, WB ;

KAKALIOS, J .

PHYSICAL REVIEW B, 1988, 37 (02) :1020-1023

[5]

JACKSON WB, 1989, AMORPHOUS SILICON RE, P247

[6] STRETCHED-EXPONENTIAL RELAXATION ARISING FROM DISPERSIVE DIFFUSION OF HYDROGEN IN AMORPHOUS-SILICON [J].

KAKALIOS, J ;

STREET, RA ;

JACKSON, WB .

PHYSICAL REVIEW LETTERS, 1987, 59 (09) :1037-1040

[7] EXCITATION AND TEMPERATURE-DEPENDENCE OF THE PHOTOINDUCED EXCESS CONDUCTIVITY IN DOPING-MODULATED AMORPHOUS-SILICON [J].

KAKALIOS, J .

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1986, 54 (03) :199-218

[8]

Kakalios J., 1987, Disordered semiconductors, P529

[9] PERSISTENT PHOTOCONDUCTIVITY IN DOPING-MODULATED AMORPHOUS-SEMICONDUCTORS [J].

KAKALIOS, J ;

FRITZSCHE, H .

PHYSICAL REVIEW LETTERS, 1984, 53 (16) :1602-1605

[10]

KAKALIOS J, 1989, AMORPHOUS SILICON RE, P207

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