OPTICAL-PROPERTIES OF ELECTRON-IRRADIATION INDUCED DEFECTS IN INP

被引:11
作者
BAYAA, D [1 ]
BASTIDE, G [1 ]
ROUZEYRE, M [1 ]
SIBILLE, A [1 ]
机构
[1] CTR NATL ETUD TELECOMMUN,F-92220 BAGNEUX,FRANCE
关键词
D O I
10.1016/0038-1098(84)90113-3
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:359 / 363
页数:5
相关论文
共 15 条
[1]  
BRAILOVSKII EY, 1981, SOV PHYS SEMICOND+, V15, P336
[2]  
BRAILOVSKII EY, 1982, PHYS STATUS SOLIDI A, V71, P563, DOI 10.1002/pssa.2210710232
[3]   DEEP-LEVEL OPTICAL SPECTROSCOPY IN GAAS [J].
CHANTRE, A ;
VINCENT, G ;
DUBOIS .
PHYSICAL REVIEW B, 1981, 23 (10) :5335-5359
[4]   NONLOCAL PSEUDOPOTENTIAL CALCULATIONS FOR ELECTRONIC-STRUCTURE OF 11 DIAMOND AND ZINCBLENDE SEMICONDUCTORS [J].
CHELIKOWSKY, JR ;
COHEN, ML .
PHYSICAL REVIEW B, 1976, 14 (02) :556-582
[5]   DOUBLE CORRELATION TECHNIQUE (DDLTS) FOR ANALYSIS OF DEEP LEVEL PROFILES IN SEMICONDUCTORS [J].
LEFEVRE, H ;
SCHULZ, M .
APPLIED PHYSICS, 1977, 12 (01) :45-53
[6]   DEFECT STATES IN ELECTRON BOMBARDED N-INP [J].
LEVINSON, M ;
BENTON, JL ;
TEMKIN, H ;
KIMERLING, LC .
APPLIED PHYSICS LETTERS, 1982, 40 (11) :990-992
[7]   ELECTRON-IRRADIATION EFFECTS IN PARA-TYPE GAAS [J].
LOUALICHE, S ;
NOUAILHAT, A ;
GUILLOT, G ;
GAVAND, M ;
LAUGIER, A ;
BOURGOIN, JC .
JOURNAL OF APPLIED PHYSICS, 1982, 53 (12) :8691-8696
[8]  
PONS D, 1980, APPL PHYS LETT, V37, P432
[9]   ELECTRON-IRRADIATION INDUCED DEEP LEVELS IN P-INP [J].
SIBILLE, A ;
BOURGOIN, JC .
APPLIED PHYSICS LETTERS, 1982, 41 (10) :956-958
[10]   ELECTRON-IRRADIATION DEFECTS IN INP [J].
SIBILLE, A ;
RAO, EVK .
JOURNAL OF CRYSTAL GROWTH, 1983, 64 (01) :194-199