POLARIZATION DEPENDENCE OF FIELD-INDUCED REFRACTIVE-INDEX VARIATION IN STRAINED AND UNSTRAINED QUANTUM-WELL STRUCTURES

被引：7

作者：

CHONG, TC

WAN, HW

CHUA, SJ

机构：

[1] Centre for Optoelectronics, Department of Electrical Engineering, National University of Singapore, 10 Kent Ridge Cresent

来源：

ELECTRONICS LETTERS | 1990年 / 26卷 / 14期

关键词：

Electro-optics; Polarisation;

D O I：

10.1049/el:19900686

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The polarisation dependence of the field-induced refractive index variation in strained and unstrained quantum well structures is analysed. It is shown that the effect of strain combined with the quantum-size effect can be used to control the polarisation dependence of the refractive index variation which is significant in thin quantum wells. © 1990, The Institution of Electrical Engineers. All rights reserved.

引用

页码：1060 / 1061

页数：2

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