GROWTH AND METALLIZATION OF ALGAAS/GAAS CARBON-DOPED HBTS USING TRIMETHYLAMINE ALANE BY CBE

被引：2

作者：

CHIU, TH ^{[1
]}

KUO, TY ^{[1
]}

FONSTAD, CG ^{[1
]}

机构：

[1] MIT,DEPT ELECT ENGN,CAMBRIDGE,MA 02139

来源：

IEEE ELECTRON DEVICE LETTERS | 1991年 / 12卷 / 06期

关键词：

D O I：

10.1109/55.82063

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We show that the entire structure of high-quality AlGaAs/GaAs HBT's including a nonalloyed delta-doped ohmic contact and in-situ Al metallization can be grown by chemical beam epitaxy (CBE) using a new precursor trimethylamine alane as the Al source. The graded Al(x)Ga(1-x)As and uniform GaAs bases (both approximately 1000 angstrom thick) are doped with carbon to high 10(19) cm-3 using trimethyl-Ga. A current gain of 10 at a current density of 2500 A/cm2 is obtained for both uniform- and graded-base HBT's. Both devices show good output characteristics.

引用

收藏

页码：287 / 289

页数：3

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