PHOTO-ASSISTED METALORGANIC VAPOR-PHASE EPITAXY OF BLUE BLUE-GREEN LIGHT-EMITTING DIODE STRUCTURES WITH ZNSE-BASED WIDE-GAP SEMICONDUCTORS

被引：5

作者：

FUJITA, S

ASANO, T

MAEHARA, K

FUJITA, S

机构：

[1] Department of Electrical Engineering, Kyoto University, Kyoto

来源：

APPLIED SURFACE SCIENCE | 1994年 / 79-80卷 / 1-4期

关键词：

D O I：

10.1016/0169-4332(94)90421-9

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Successful growth of well-defined ZnCdSe/ZnSe quantum well structures and acceptor doping in ZnSe are demonstrated based on photo-assisted metalorganic vapor-phase epitaxy (MOVPE), which utilizes photocatalytic growth processes at the growing surface. Blue/blue-green electroluminescence from quantum wells in a double heterostructure diode suggests promising potential of this technique for fabrication of short wavelength optoelectronic devices such as light emitting diodes and lasers.

引用

页码：270 / 274

页数：5

共 20 条

[1] LASER ACTION IN THE BLUE-GREEN FROM OPTICALLY PUMPED (ZN,CD)SE/ZNSE SINGLE QUANTUM-WELL STRUCTURES
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[2] GROWTH-RATE ENHANCEMENT BY XENON LAMP IRRADIATION IN ORGANOMETALLIC VAPOR-PHASE EPITAXY OF ZNSE
FUJITA, S
TANABE, A
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FUJITA, S
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[3] PHOTO-ASSISTED METALORGANIC VAPOR-PHASE EPITAXIAL-GROWTH OF WIDE-GAP II-VI-SEMICONDUCTORS
FUJITA, S
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[4] INVESTIGATION OF PHOTOINDUCED SURFACE-REACTIONS BY MASS ANALYSIS IN OMVPE OF II-VI-SEMICONDUCTORS
FUJITA, S
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FUJITA, S
[J]. JOURNAL OF CRYSTAL GROWTH, 1991, 115 (1-4) : 269 - 273
[5] LUMINESCENCE AND ELECTRICAL-PROPERTIES OF ZNSE GROWN BY PHOTO-ASSISTED OMVPE
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TANABE, A
KINOSHITA, T
FUJITA, S
[J]. JOURNAL OF CRYSTAL GROWTH, 1990, 101 (1-4) : 48 - 51
[6] OBSERVATION OF PHOTOINDUCED ALKYL GROUP ELIMINATION FROM PRECURSORS IN ORGANOMETALLIC VAPOR-PHASE EPITAXY OF ZN-BASED II-VI-SEMICONDUCTORS
FUJITA, S
HIRATA, SY
FUJITA, S
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1991, 30 (3B): : L507 - L510
[7] COMPENSATION PROCESSES IN NITROGEN DOPED ZNSE
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SIMPSON, J
WANG, SY
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[J]. APPLIED PHYSICS LETTERS, 1992, 61 (18) : 2208 - 2210
[8] A DEFECT MODEL FOR PHOTOIRRADIATED SEMICONDUCTORS - SUPPRESSION OF THE SELF-COMPENSATION IN II-VI MATERIALS
ICHIMURA, M
WADA, T
FUJITA, S
FUJITA, S
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1991, 30 (12A): : 3475 - 3481
[9] REDUCTION OF COMPENSATING DEFECTS IN ZNSE AND ZNS BY PHOTOIRRADIATION
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WADA, T
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[J]. JOURNAL OF CRYSTAL GROWTH, 1992, 117 (1-4) : 689 - 693
[10] CONDUCTIVITY CONTROL OF ZNSE GROWN BY MOVPE AND ITS APPLICATION FOR BLUE ELECTROLUMINESCENCE
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[J]. JOURNAL OF CRYSTAL GROWTH, 1990, 101 (1-4) : 953 - 957

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