INVESTIGATION OF PHOTOINDUCED SURFACE-REACTIONS BY MASS ANALYSIS IN OMVPE OF II-VI-SEMICONDUCTORS

被引：16

作者：

FUJITA, S

HIRATA, S

FUJITA, S

机构：

[1] Department of Electrical Engineering, Kyoto University, Kyoto

来源：

JOURNAL OF CRYSTAL GROWTH | 1991年 / 115卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(91)90751-P

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We investigated, by mass analysis, the growth reactions in photo-OMVPE of II-VI semiconductor ZnSe from the DEZn-DMSe source combination. Photo-irradiation enhances the decomposition of DEZn, but this phenomenon occurs only at a substrate temperature higher than 300-degrees-C and after forming a thin (a few hundred angstrom in thickness) ZnSe layer on a GaAs substrate by thermal energy. From these results, we present a model that DEZn releases one of the alkyls by thermal energy and chemisorbs at the growth surface, then releases another alkyl being assisted by photo-generated carriers in the underlying ZnSe layer.

引用

页码：269 / 273

页数：5

共 15 条

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[6] SURFACE PHOTOCHEMICAL-REACTIONS FOR ALKYL GROUP ELIMINATION FROM PRECURSORS IN OMVPE
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[7] OBSERVATION OF PHOTOINDUCED ALKYL GROUP ELIMINATION FROM PRECURSORS IN ORGANOMETALLIC VAPOR-PHASE EPITAXY OF ZN-BASED II-VI-SEMICONDUCTORS
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