INVESTIGATION OF PHOTOINDUCED SURFACE-REACTIONS BY MASS ANALYSIS IN OMVPE OF II-VI-SEMICONDUCTORS

被引:16
作者
FUJITA, S
HIRATA, S
FUJITA, S
机构
[1] Department of Electrical Engineering, Kyoto University, Kyoto
关键词
D O I
10.1016/0022-0248(91)90751-P
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
We investigated, by mass analysis, the growth reactions in photo-OMVPE of II-VI semiconductor ZnSe from the DEZn-DMSe source combination. Photo-irradiation enhances the decomposition of DEZn, but this phenomenon occurs only at a substrate temperature higher than 300-degrees-C and after forming a thin (a few hundred angstrom in thickness) ZnSe layer on a GaAs substrate by thermal energy. From these results, we present a model that DEZn releases one of the alkyls by thermal energy and chemisorbs at the growth surface, then releases another alkyl being assisted by photo-generated carriers in the underlying ZnSe layer.
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页码:269 / 273
页数:5
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