THEORY OF HYDROGEN DIFFUSION AND REACTIONS IN CRYSTALLINE SILICON

[1] THEORY OF THE SILICON VACANCY - AN ANDERSON NEGATIVE-U SYSTEM [J]. PHYSICAL REVIEW B, 1980, 21 (12): : 5662 - 5686

[2] BONDING OR ANTIBONDING POSITION OF HYDROGEN IN SILICON [J]. PHYSICAL REVIEW B, 1987, 35 (14): : 7450 - 7453

[3] ELECTRONIC-STRUCTURE AND TOTAL-ENERGY MIGRATION BARRIERS OF SILICON SELF-INTERSTITIALS [J]. PHYSICAL REVIEW B, 1984, 30 (04): : 1844 - 1852

[4] BARYAM Y, 1985, J ELECTRON MATER A, V14, P261

[5] BEELER F, 1986, THESIS U STUTTGART

[6] DONOR-HYDROGEN COMPLEXES IN PASSIVATED SILICON [J]. PHYSICAL REVIEW B, 1988, 37 (05): : 2770 - 2773

[7] MICROSCOPIC THEORY OF ATOMIC DIFFUSION MECHANISMS IN SILICON [J]. PHYSICAL REVIEW LETTERS, 1984, 52 (20) : 1814 - 1817

[8] CAR R, 1985, J ELECTRON MATER A, V14, P269

[9] GROUND-STATE OF THE ELECTRON-GAS BY A STOCHASTIC METHOD [J]. PHYSICAL REVIEW LETTERS, 1980, 45 (07) : 566 - 569

[10] ATOMIC AND MOLECULAR-HYDROGEN IN THE SI LATTICE [J]. PHYSICS LETTERS A, 1983, 93 (06) : 303 - 304

[1] THEORY OF THE SILICON VACANCY - AN ANDERSON NEGATIVE-U SYSTEM [J]. PHYSICAL REVIEW B, 1980, 21 (12): : 5662 - 5686

[2] BONDING OR ANTIBONDING POSITION OF HYDROGEN IN SILICON [J]. PHYSICAL REVIEW B, 1987, 35 (14): : 7450 - 7453

[3] ELECTRONIC-STRUCTURE AND TOTAL-ENERGY MIGRATION BARRIERS OF SILICON SELF-INTERSTITIALS [J]. PHYSICAL REVIEW B, 1984, 30 (04): : 1844 - 1852

[4] BARYAM Y, 1985, J ELECTRON MATER A, V14, P261

[5] BEELER F, 1986, THESIS U STUTTGART

[6] DONOR-HYDROGEN COMPLEXES IN PASSIVATED SILICON [J]. PHYSICAL REVIEW B, 1988, 37 (05): : 2770 - 2773

[7] MICROSCOPIC THEORY OF ATOMIC DIFFUSION MECHANISMS IN SILICON [J]. PHYSICAL REVIEW LETTERS, 1984, 52 (20) : 1814 - 1817

[8] CAR R, 1985, J ELECTRON MATER A, V14, P269

[9] GROUND-STATE OF THE ELECTRON-GAS BY A STOCHASTIC METHOD [J]. PHYSICAL REVIEW LETTERS, 1980, 45 (07) : 566 - 569

[10] ATOMIC AND MOLECULAR-HYDROGEN IN THE SI LATTICE [J]. PHYSICS LETTERS A, 1983, 93 (06) : 303 - 304