NONRANDOM SINGLE EVENT UPSET TRENDS

被引：14

作者：

MCDONALD, PT ^{[1
]}

STAPOR, WJ ^{[1
]}

CAMPBELL, AB ^{[1
]}

MASSENGILL, LW ^{[1
]}

机构：

[1] VANDERBILT UNIV,NASHVILLE,TN 37235

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1989年 / 36卷 / 06期

关键词：

D O I：

10.1109/23.45443

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：2324 / 2329

页数：6

共 6 条

[1] THE TOTAL DOSE DEPENDENCE OF THE SINGLE EVENT UPSET SENSITIVITY OF IDT STATIC RAMS [J].

CAMPBELL, AB ;

STAPOR, WJ .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1984, 31 (06) :1175-1177

[2] A DISTRIBUTION FUNCTION FOR DOUBLE-BIT UPSETS [J].

EDMONDS, LD .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1989, 36 (02) :1344-1346

[3] USE OF AN ION MICROBEAM TO STUDY SINGLE EVENT UPSETS IN MICROCIRCUITS [J].

KNUDSON, AR ;

CAMPBELL, AB .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1981, 28 (06) :4017-4021

[4]

MURRAY K, 1989, IN PRESS NUCL INSTRU

[5] EXPERIMENTAL AND ANALYTICAL INVESTIGATION OF SINGLE EVENT, MULTIPLE BIT UPSETS IN POLYSILICON LOAD, 64KX1 NMOS SRAMS [J].

SONG, Y ;

VU, KN ;

CABLE, JS ;

WITTELES, AA ;

KOLASINSKI, WA ;

KOGA, R ;

ELDER, JH ;

OSBORN, JV ;

MARTIN, RC ;

GHONIEM, NM .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1988, 35 (06) :1673-1677

[6] LOW-TEMPERATURE PROTON-INDUCED UPSETS IN NMOS RESISTIVE LOAD STATIC RAM [J].

STAPOR, WJ ;

MCDONALD, PT ;

SWICKERT, SL ;

CAMPBELL, AB ;

MASSENGILL, LW ;

KERNS, SE .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1988, 35 (06) :1596-1601

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