LOW-TEMPERATURE PROTON-INDUCED UPSETS IN NMOS RESISTIVE LOAD STATIC RAM

被引：13

作者：

STAPOR, WJ ^{[1
]}

MCDONALD, PT ^{[1
]}

SWICKERT, SL ^{[1
]}

CAMPBELL, AB ^{[1
]}

MASSENGILL, LW ^{[1
]}

KERNS, SE ^{[1
]}

机构：

[1] VANDERBILT UNIV,NASHVILLE,TN 37235

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1988年 / 35卷 / 06期

关键词：

Computer Simulation - Data Storage; Digital--Random Access - Protons - Semiconductor Devices; MOS;

D O I：

10.1109/23.25504

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Proton-induced upset measurements were performed on some NMOS resistive-load static RAMs for temperatures down to -125°C. Results show that the upset cross section strongly depends on temperature as well as the incident beam flux. SPICE modeling for the critical charge versus temperature is not sufficient to explain the data. An explanation is provided that describes multiple subcritical linear-energy-transfer particle strikes within RAM cell integration times that cause upsets.

引用

页码：1596 / 1601

页数：6

共 14 条

[1] THE EFFECTS OF SOLAR-FLARES ON SINGLE EVENT UPSET RATES [J].