RADIATION HARDNESS STUDIES ON SILICON DETECTORS IN FAST-NEUTRON FIELDS

被引:5
作者
ANGELESCU, T
CHEREMUKHIN, AE
GHETE, VM
GHIORDANESCU, N
GOLUTVIN, IA
LAZANU, S
LAZANU, I
MIHUL, A
RADU, A
SUSOVA, NY
VASILESCU, A
ZAMYATIN, NI
机构
[1] JOINT NUCL RES INST, DUBNA, RUSSIA
[2] INST PHYS & NUCL ENGN, BUCHAREST, ROMANIA
[3] INST ATOM PHYS, R-76900 BUCHAREST, ROMANIA
关键词
D O I
10.1016/0168-9002(94)01534-1
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
Electrical and alpha-particle PHA damage tests for ELMA and SGS silicon detectors irradiated at two different fast neutron facilities, in the range of fluences from 10(10) to 10(15) n/cm(2) are presented. Results on depletion voltage, alpha damage constants and self-annealing are discussed. Supplementary damage effects due to nuclear reactions are evaluated, The spread of the data in the self-annealing corrected alpha damage constant versus hardness parameter plot shows the difficulty in comparing the results obtained in different neutron environments. A systematics is however possible, in the framework of standardization of the ''1 MeV equivalent'' neutron spectrum.
引用
收藏
页码:55 / 63
页数:9
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