CRYSTAL IMPERFECTIONS IN SILICON EPITAXIAL LAYERS GROWN ON ION-IMPLANTED SUBSTRATES

被引：3

作者：

BAKER, JFC ^{[1
]}

OGDEN, R ^{[1
]}

机构：

[1] PLESSEY CO LTD,ALLEN CLARK RES CTR,TOWCESTER,NORTHAMPTONSHIR,ENGLAND

来源：

JOURNAL OF MATERIALS SCIENCE | 1975年 / 10卷 / 07期

关键词：

D O I：

10.1007/BF00541417

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

收藏

页码：1259 / 1261

页数：3

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