学术探索
学术期刊
新闻热点
数据分析
智能评审
立即登录
VAPOR-PHASE GROWTH OF GAAS BY THE HYDRIDE TECHNIQUE
被引:2
作者
:
DORRITY, IA
论文数:
0
引用数:
0
h-index:
0
DORRITY, IA
机构
:
来源
:
JOURNAL DE PHYSIQUE
|
1982年
/ 43卷
/ NC-5期
关键词
:
D O I
:
10.1051/jphyscol:1982555
中图分类号
:
学科分类号
:
摘要
:
引用
收藏
页码:457 / 464
页数:8
相关论文
共 16 条
[11]
EPITAXIAL GAAS KINETIC STUDIES - (001)ORIENTATION
[J].
SHAW, DW
论文数:
0
引用数:
0
h-index:
0
SHAW, DW
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1970,
117
(05)
:683
-&
[12]
KINETIC ASPECTS IN VAPOR-PHASE EPITAXY OF III-V COMPOUNDS
[J].
SHAW, DW
论文数:
0
引用数:
0
h-index:
0
机构:
TEXAS INSTR INC,DALLAS,TX 75222
TEXAS INSTR INC,DALLAS,TX 75222
SHAW, DW
.
JOURNAL OF CRYSTAL GROWTH,
1975,
31
(DEC)
:130
-141
[13]
KINETICS OF TRANSPORT AND EPITAXIAL GROWTH OF GAAS WITH A GA-ASCL3 SYSTEM
[J].
SHAW, DW
论文数:
0
引用数:
0
h-index:
0
SHAW, DW
.
JOURNAL OF CRYSTAL GROWTH,
1971,
8
(01)
:117
-&
[14]
TITJEN JJ, 1966, J ELECTROCHEM SOC, V113, P724
[15]
SULFUR INCORPORATION IN VPE GAAS
[J].
VEUHOFF, E
论文数:
0
引用数:
0
h-index:
0
VEUHOFF, E
;
MAIER, M
论文数:
0
引用数:
0
h-index:
0
MAIER, M
;
BACHEM, KH
论文数:
0
引用数:
0
h-index:
0
BACHEM, KH
;
BALK, P
论文数:
0
引用数:
0
h-index:
0
BALK, P
.
JOURNAL OF CRYSTAL GROWTH,
1981,
53
(03)
:598
-604
[16]
A FLOW CHANNEL REACTOR FOR GAAS VAPOR-PHASE EPITAXY
[J].
WESTPHAL, GH
论文数:
0
引用数:
0
h-index:
0
WESTPHAL, GH
;
SHAW, DW
论文数:
0
引用数:
0
h-index:
0
SHAW, DW
;
HARTZELL, RA
论文数:
0
引用数:
0
h-index:
0
HARTZELL, RA
.
JOURNAL OF CRYSTAL GROWTH,
1982,
56
(02)
:324
-331
←
1
2
→
共 16 条
[11]
EPITAXIAL GAAS KINETIC STUDIES - (001)ORIENTATION
[J].
SHAW, DW
论文数:
0
引用数:
0
h-index:
0
SHAW, DW
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1970,
117
(05)
:683
-&
[12]
KINETIC ASPECTS IN VAPOR-PHASE EPITAXY OF III-V COMPOUNDS
[J].
SHAW, DW
论文数:
0
引用数:
0
h-index:
0
机构:
TEXAS INSTR INC,DALLAS,TX 75222
TEXAS INSTR INC,DALLAS,TX 75222
SHAW, DW
.
JOURNAL OF CRYSTAL GROWTH,
1975,
31
(DEC)
:130
-141
[13]
KINETICS OF TRANSPORT AND EPITAXIAL GROWTH OF GAAS WITH A GA-ASCL3 SYSTEM
[J].
SHAW, DW
论文数:
0
引用数:
0
h-index:
0
SHAW, DW
.
JOURNAL OF CRYSTAL GROWTH,
1971,
8
(01)
:117
-&
[14]
TITJEN JJ, 1966, J ELECTROCHEM SOC, V113, P724
[15]
SULFUR INCORPORATION IN VPE GAAS
[J].
VEUHOFF, E
论文数:
0
引用数:
0
h-index:
0
VEUHOFF, E
;
MAIER, M
论文数:
0
引用数:
0
h-index:
0
MAIER, M
;
BACHEM, KH
论文数:
0
引用数:
0
h-index:
0
BACHEM, KH
;
BALK, P
论文数:
0
引用数:
0
h-index:
0
BALK, P
.
JOURNAL OF CRYSTAL GROWTH,
1981,
53
(03)
:598
-604
[16]
A FLOW CHANNEL REACTOR FOR GAAS VAPOR-PHASE EPITAXY
[J].
WESTPHAL, GH
论文数:
0
引用数:
0
h-index:
0
WESTPHAL, GH
;
SHAW, DW
论文数:
0
引用数:
0
h-index:
0
SHAW, DW
;
HARTZELL, RA
论文数:
0
引用数:
0
h-index:
0
HARTZELL, RA
.
JOURNAL OF CRYSTAL GROWTH,
1982,
56
(02)
:324
-331
←
1
2
→