POTENTIALITIES OF NEW X-RAY-DIFFRACTION METHODS IN STRUCTURAL STUDIES OF ION-IMPLANTED SILICON LAYERS

被引：25

作者：

GOLOVIN, AL

IMAMOV, RM

KONDRASHKINA, EA

机构：

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1985年 / 88卷 / 02期

关键词：

D O I：

10.1002/pssa.2210880213

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：505 / 514

页数：10

共 23 条

[1] X-RAY-DIFFRACTION UNDER SPECULAR REFLECTION CONDITIONS - IDEAL CRYSTALS [J].

AFANASEV, AM ;

MELKONYAN, MK .

ACTA CRYSTALLOGRAPHICA SECTION A, 1983, 39 (MAR) :207-210

[2] X-RAY-DIFFRACTION IN A PERFECT CRYSTAL WITH DISTURBED SURFACE-LAYER [J].

AFANASEV, AM ;

KOVALCHUK, MV ;

KOVEV, EK ;

KOHN, VG .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1977, 42 (01) :415-422

[3] X-RAY-DIFFRACTION UNDER SPECULAR REFLECTION CONDITIONS ON CRYSTALS WITH AN AMORPHOUS SURFACE-FILM [J].

ALEKSANDROV, PA ;

AFANASIEV, AM ;

MELKONYAN, MK ;

STEPANOV, SA .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1984, 81 (01) :47-53

[4]

ALEKSANDROV PA, 1984, TSES STAT SOL A, V86, P143

[5]

ALEKSANDROV PA, 1984, KRISTALLOGRAFIYA+, V29, P197

[6]

ALEKSANDROV PA, 1984, POVERCHNOST, V8, P9

[7] NEUTRON AND X-RAY-DIFFRACTION INVESTIGATIONS OF SILICON IMPLANTED BY PHOSPHORUS IONS [J].

EICHHORN, F .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1975, 30 (01) :155-162

[8] OBTAINING QUANTITATIVE INFORMATION ON AMORPHOUS LAYER THICKNESS ON CRYSTAL-SURFACE USING X-RAY-DIFFRACTION UNDER SPECULAR REFLECTION CONDITIONS [J].

GOLOVIN, AL ;

IMAMOV, RM .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1983, 80 (01) :K63-K65

[9] INVESTIGATION OF THE X-RAY-SCATTERING INTENSITY FOR THE LAUE-CASE DIFFRACTION UNDER TOTAL-EXTERNAL-REFLECTION CONDITIONS [J].

GOLOVIN, AL ;

IMAMOV, RM .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1983, 77 (01) :K91-K94

[10] EXPERIMENTAL-STUDY OF X-RAY-DIFFRACTION UNDER SPECULAR REFLECTION CONDITIONS [J].

GOLOVIN, AL ;

IMAMOV, RM ;

STEPANOV, SA .

ACTA CRYSTALLOGRAPHICA SECTION A, 1984, 40 (MAY) :225-228

← 1 2 3 →