LOW-FREQUENCY NOISE IN INP-BASED NNPNN DOUBLE HETEROJUNCTION BIPOLAR-TRANSISTORS

被引：2

作者：

SU, YK

SHEI, SC

CHEN, CH

机构：

[1] Department of Electrical Engineering, National Cheng Kung University, Tainan

来源：

APPLIED PHYSICS LETTERS | 1992年 / 61卷 / 13期

关键词：

D O I：

10.1063/1.107501

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

This letter deals with the low-frequency noise in an InGaAs(P)/InP double heterojunction bipolar transistor at room temperature. The recombination is mainly responsible for the noise. The current dependence of the base noise with floating collector was of the form I(B)3 and the shot noise of base current corresponding to 3.2 X 10(-24) A2/Hz for f = 10 Hz. The current dependence of the collector noise with high frequency short circuited was of the form I(c)1.55 and the shot noise of collector current corresponding to 3.2 X 10(-24) A2/Hz for f = 10 Hz.

引用

页码：1576 / 1578

页数：3

共 14 条

[11] HETEROSTRUCTURE BIPOLAR-TRANSISTORS AND INTEGRATED-CIRCUITS [J].