INTERACTION OF THE ATOMIC-HYDROGEN WITH SI(111)ROOT-3-X-ROOT-3-AL SURFACE - LEED AND AES RESULTS

被引：23

作者：

SARANIN, AA

KHRAMTSOVA, EA

LIFSHITS, VG

机构：

[1] Institute of Automation and Control Processes, Far East Scientific Center, the Russian Academy of Sciences, 690041 Vladivostok

来源：

SURFACE SCIENCE | 1994年 / 302卷 / 1-2期

关键词：

D O I：

10.1016/0039-6028(94)91096-0

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Using LEED and AES the RT structural transformations from Si(lll)root 3 x root 3-Al to Si(lll)1x1-(Al, H) induced by atomic hydrogen has been studied. It has been found that transformation kinetics is determined by the exposure time and does not depend on the pressure during exposure. Upon heating at temperatures above 700 degrees C the root 3 x root 3-Al structure reappears, but the Al coverage is always less than the original coverage. Isothermal desorption of Al from the Si(111)root 3 x root 3-Al structure has been studied. It has been shown that Al desorption does not produce noticeable effect on the Al coverage in the reappeared root 3 x root 3 structure. It has been concluded that a fall in Al coverage is determined not by the formation of the volatile Al-hydride but rather by the interaction of uncontrollable contaminants (oxygen-containing molecules) with aluminum.

引用

页码：57 / 63

页数：7

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