HYDROGEN-INDUCED REORDERING OF THE SI(111)-ROOT-3X-ROOT-3-AL SURFACE STUDIED BY ERDA LEED

被引:33
作者
NAITOH, M
OHNISHI, H
OZAKI, Y
SHOJI, F
OURA, K
机构
[1] Department of Electronic Engineering, Faculty of Engineering, Osaka University, Suita, Osaka, 565
关键词
D O I
10.1016/0169-4332(92)90415-T
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Using elastic recoil detection analysis and low-energy electron diffraction we have investigated the adsorption process of hydrogen on the Si(111)- square-root 3 x square-root 3-Al surface. We have found that (1) hydrogen adsorption of 0.5 ML induces a structural transformation from the Si(111)-square-root 3 x square-root 3-Al to Si(111)-1 x 1-Al(H) at room temperature, (2) the saturation coverage of hydrogen on the square-root 3 x square-root 3 -Al surface is 1.6 ML, which almost coincides with that on a clean 7 x 7 surface, (3) the 1 x 1-Al(H) LEED pattern still persists after almost all hydrogen has desorbed from the 1 x 1-Al(H) surface on heating to 400-degrees-C, and that (4) the original square-root 3 x square-root 3 -Al surface is recovered after heating at 700-degrees-C.
引用
收藏
页码:190 / 194
页数:5
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