INVESTIGATIONS ON THE INFLUENCE OF MASKS ON THE NATURE OF SELECTIVE AREA EPITAXY

被引：10

作者：

THOMPSON, J

WOOD, AK

CARR, N

CHARLES, PM

MOSELEY, AJ

PRITCHARD, R

HAMILTON, B

CHEW, A

SYKES, DE

SEONG, TY

机构：

[1] UNIV MANCHESTER,INST SCI & TECHNOL,DEPT PURE & APPL PHYS,MANCHESTER M60 1QD,LANCS,ENGLAND

[2] LOUGHBOROUGH UNIV TECHNOL,ISST,LOUGHBOROUGH LE11 3TU,LEICS,ENGLAND

[3] UNIV OXFORD,DEPT MAT,OXFORD OX1 3PH,ENGLAND

来源：

JOURNAL OF CRYSTAL GROWTH | 1992年 / 124卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(92)90464-T

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We have evaluated the structural and optical properties of epitaxial layers of GaInAs and GaInAsP grown on InP substrates patterned with SiO2 masks. The effect of the mask on the MOVPE grown material surrounding and underlying the mask, and the device performance from this material has been assessed in detail for the first time.

引用

收藏

页码：227 / 234

页数：8

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