PHOTODISSOCIATION OF DIMETHYLALUMINUM HYDRIDE ON SI(100) AT 193-NM STUDIED BY X-RAY PHOTOELECTRON-SPECTROSCOPY

被引：11

作者：

OHASHI, M ^{[1
]}

SHOGEN, S ^{[1
]}

KAWASAKI, M ^{[1
]}

HANABUSA, M ^{[1
]}

机构：

[1] TOYOHASHI UNIV TECHNOL,DEPT ELECT & ELECTR ENGN,TENPA KU,TOYOHASHI 441,JAPAN

来源：

JOURNAL OF APPLIED PHYSICS | 1993年 / 73卷 / 07期

关键词：

D O I：

10.1063/1.352933

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

By irradiation of 193 nm photons on the molecularly adsorbed species of dimethylaluminum hydride on Si(100) at 150 K, the [C]/[Al] atom ratio decreased and the Al2p binding energy was lowered. This change is due to the Al C bond cleavage by direct photoabsorption of the adsorbed species. Irradiation at 351 nm induces no appreciable dissociation of the adsorbed species. When dimethylaluminum hydride was adsorbed on the Si substrate at room temperature, the 193 nm irradiation induced only a small change in the x-ray photoelectron spectra of the dissociatively adsorbed species. Variation of the photodissociation quantum yield is discussed in terms of dissociative adsorption mechanisms.

引用

页码：3549 / 3554

页数：6

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