RESIDUAL-STRESS STRAIN ANALYSIS IN THIN-FILMS BY X-RAY-DIFFRACTION

被引：224

作者：

NOYAN, IC

HUANG, TC

YORK, BR

机构：

[1] IBM CORP,ALMADEN RES CTR,DIV RES,SAN JOSE,CA 95120

[2] IBM CORP,MAT LAB,SAN JOSE,CA 95193

来源：

CRITICAL REVIEWS IN SOLID STATE AND MATERIALS SCIENCES | 1995年 / 20卷 / 02期

关键词：

THIN FILMS; RESIDUAL STRESSES; MECHANICAL RESPONSE; X-RAY DIFFRACTION; STRESS STATES; GRAZING INCIDENCE X-RAY ANALYSIS; GLANCING INCIDENCE X-RAY ANALYSIS;

D O I：

10.1080/10408439508243733

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Residual stresses are found in the majority of multilayer thin film structures used in modern technology. The measurement and modeling of such stress fields and the elucidation of their effects on structural reliability and device operation have been a ''growth area'' in the literature, with contributions from authors in various scientific and engineering disciplines. In this article the measurement of the residual stresses in thin film structures with X-ray diffraction techniques is reviewed and the interpretation of such data and their relationship to mechanical reliability concerns are discussed.

引用

页码：125 / 177

页数：53

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[21] THE DETERMINATION OF THE ELASTIC FIELD OF AN ELLIPSOIDAL INCLUSION, AND RELATED PROBLEMS [J].