THE EFFECT OF FLUORINE-ATOMS ON SILICON AND FLUOROCARBON ETCHING IN REACTIVE ION-BEAM ETCHING

[1] CHARLESBY, 1960, ATOMIC RAD POLYM, P348

[2] CHEEKS TL, IN PRESS

[3] CLARK DT, 1975, J MACROMOL SCI R M C, VC 12, P191

[4] ION-SURFACE INTERACTIONS IN PLASMA ETCHING [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (08) : 3532 - 3540

[5] PLASMA-ETCHING - DISCUSSION OF MECHANISMS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (02): : 391 - 403

[6] MECHANISMS OF ETCHING AND POLYMERIZATION IN RADIOFREQUENCY DISCHARGES OF CF4-H2,CF4-C2F4,C2F6-H2,C3F8-H2 [J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (03) : 1284 - 1288

[7] ANISOTROPIC ETCHING OF SIO2 IN LOW-FREQUENCY CF4/O2 AND NF3/AR PLASMAS [J]. JOURNAL OF APPLIED PHYSICS, 1984, 55 (01) : 242 - 252

[8] SELECTIVE ETCHING OF SILICON DIOXIDE USING REACTIVE ION ETCHING WITH CF4-H2 [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (08) : 1419 - 1421

[9] FIELD FH, 1970, ELECTRON IMPACT PHEN, P179

[10] Flamm D.L., 1981, PLASMA CHEM PLASMA P, V1, P317, DOI [10.1007/bf00565992, DOI 10.1007/BF00565992]

[1] CHARLESBY, 1960, ATOMIC RAD POLYM, P348

[2] CHEEKS TL, IN PRESS

[3] CLARK DT, 1975, J MACROMOL SCI R M C, VC 12, P191

[4] ION-SURFACE INTERACTIONS IN PLASMA ETCHING [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (08) : 3532 - 3540

[5] PLASMA-ETCHING - DISCUSSION OF MECHANISMS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (02): : 391 - 403

[6] MECHANISMS OF ETCHING AND POLYMERIZATION IN RADIOFREQUENCY DISCHARGES OF CF4-H2,CF4-C2F4,C2F6-H2,C3F8-H2 [J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (03) : 1284 - 1288

[7] ANISOTROPIC ETCHING OF SIO2 IN LOW-FREQUENCY CF4/O2 AND NF3/AR PLASMAS [J]. JOURNAL OF APPLIED PHYSICS, 1984, 55 (01) : 242 - 252

[8] SELECTIVE ETCHING OF SILICON DIOXIDE USING REACTIVE ION ETCHING WITH CF4-H2 [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (08) : 1419 - 1421

[9] FIELD FH, 1970, ELECTRON IMPACT PHEN, P179

[10] Flamm D.L., 1981, PLASMA CHEM PLASMA P, V1, P317, DOI [10.1007/bf00565992, DOI 10.1007/BF00565992]