LOCAL TEMPERATURE RISE DURING LASER-INDUCED ETCHING OF GALLIUM-ARSENIDE IN SICL4 ATMOSPHERE

被引：17

作者：

TAKAI, M

NAKAI, H

TSUCHIMOTO, J

GAMO, K

NAMBA, S

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1985年 / 24卷 / 09期

关键词：

D O I：

10.1143/JJAP.24.L705

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L705 / L708

页数：4

共 21 条

[1]

BEBB HB, 1972, SEMICONDUCT SEMIMET, V8, P238

[2] PHOTON-ASSISTED DRY ETCHING OF GAAS [J].

BREWER, P ;

HALLE, S ;

OSGOOD, RM .

APPLIED PHYSICS LETTERS, 1984, 45 (04) :475-477

[3] CCL4 AND CL-2 PLASMA-ETCHING OF III-V-SEMICONDUCTORS AND THE ROLE OF ADDED O-2 [J].

BURTON, RH ;

SMOLINSKY, G .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (07) :1599-1604

[4] HEAT TREATING AND MELTING MATERIAL WITH A SCANNING LASER OR ELECTRON-BEAM [J].

CLINE, HE ;

ANTHONY, TR .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (09) :3895-3900

[5] LASER-INDUCED MICROSCOPIC ETCHING OF GAAS AND INP [J].

EHRLICH, DJ ;

OSGOOD, RM ;

DEUTSCH, TF .

APPLIED PHYSICS LETTERS, 1980, 36 (08) :698-700

[6] LASER CHEMICAL TECHNIQUE FOR RAPID DIRECT WRITING OF SURFACE RELIEF IN SILICON [J].

EHRLICH, DJ ;

OSGOOD, RM ;

DEUTSCH, TF .

APPLIED PHYSICS LETTERS, 1981, 38 (12) :1018-1020

[7] ION-BEAM ASSISTED MASKLESS ETCHING OF GAAS BY 50 KEV FOCUSED ION-BEAM [J].

GAMO, K ;

OCHIAI, Y ;

NAMBA, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (12) :L792-L794

[8]

JOHNSON AW, 1984, LASER CONTROLLED CHE

[9] LASER-BEAM HEATING AND HIGH-TEMPERATURE BAND-TO-BAND LUMINESCENCE OF GAAS AND INP [J].

KIRILLOV, D ;

MERZ, JL .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (07) :4104-4109

[10] TEMPERATURE RISE INDUCED BY A LASER-BEAM .2. NON-LINEAR CASE [J].

LAX, M .

APPLIED PHYSICS LETTERS, 1978, 33 (08) :786-788

← 1 2 3 →