OXYGEN-INDUCED AL SURFACE SEGREGATION IN ALXGA1-XAS AND THE EFFECT OF Y-OVERLAYERS ON THE OXIDATION OF THE Y/ALXGA1-XAS INTERFACE

被引：11

作者：

MESARWI, A ^{[1
]}

IGNATIEV, A ^{[1
]}

机构：

[1] UNIV HOUSTON,CTR SPACE VACUUM EPITAXY,HOUSTON,TX 77204

来源：

JOURNAL OF APPLIED PHYSICS | 1992年 / 71卷 / 04期

关键词：

D O I：

10.1063/1.351184

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The oxidation of AlxGa1-xAs (x = 0.15, AlGaAs) was studied by Auger electron spectroscopy and x-ray photoelectron spectroscopy at 350-degrees-C and different oxygen exposures (up to 5 x 10(4) L). Also studied were the effects of yttrium overlayers (theta = 3 ML) on the oxidation of the AlGaAs surface. Substantial oxygen-induced Al surface segregation has been observed for both yttriated and non-yttriated AlGaAs surfaces which increased with increasing oxygen exposure. Also observed is a significant Y-enhanced oxidation of the AlGaAs surface. Oxidation of the yttriated AlGaAs surface was found to be a factor of 4 greater than that of the non-yttriated surface. Also, while oxidation of the non-yttriated AlGaAs yielded mainly Al2Ox (x < 3) and only little Ga2O3, the yttriated AlGaAs surface oxide layer was principally Ga2O3 and stoichiometric Al2O3. However, both the yttriated and non-yttriated surfaces were found to contain metallic As within the oxide layer.

引用

页码：1943 / 1948

页数：6

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