THE EFFECT OF GALLIUM IMPLANTATION ON THE INTERMIXING OF INGAAS/GAAS STRAINED QUANTUM-WELLS

The intermixing of InGaAs/GaAs strained quantum wells following gallium ion implantation was characterised using photoluminescence. It was found that the implanted atoms had no effect of the diffusion coefficient for intermixing when compared to an unimplanted control sample. However, it was seen that the well was broadened by a diffusion length of approximately 37 angstrom during the first anneal, before a photoluminescence measurement could be made. A simulation of the implantation process shows that cascade mixing is not sufficient to account for this and it is suggested that we are observing the diffusion of interstitials created by the implantation.