THE FABRICATION AND CHARACTERIZATION OF ION-SENSITIVE FIELD-EFFECT TRANSISTORS WITH A SILICON DIOXIDE GATE

被引：21

作者：

CHEN, SC

SU, YK

TZENG, JS

机构：

[1] Natl Cheng Kung Univ, Tainan, Taiwan, Natl Cheng Kung Univ, Tainan, Taiwan

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 1986年 / 19卷 / 10期

关键词：

D O I：

10.1088/0022-3727/19/10/020

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

13

引用

收藏

页码：1951 / 1956

页数：6

相关论文

共 13 条

[1] ISFETS USING INORGANIC GATE THIN-FILMS
ABE, H
ESASHI, M
MATSUO, T
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (12) : 1939 - 1944
[2] ION-SENSITIVE FIELD-EFFECT TRANSISTORS WITH INORGANIC GATE OXIDE FOR PH SENSING
AKIYAMA, T
UJIHIRA, Y
OKABE, Y
SUGANO, T
NIKI, E
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (12) : 1936 - 1941
[3] DEVELOPMENT OF AN ION-SENSITIVE SOLID-STATE DEVICE FOR NEUROPHYSIOLOGICAL MEASUREMENTS
BERGVELD, P
[J]. IEEE TRANSACTIONS ON BIOMEDICAL ENGINEERING, 1970, BM17 (01) : 70 - &
[4] BERGVELD P, 1972, IEEE T BIOMED ENG, V19, P64
[5] CHEUNG PW, 1978, THEORY DESIGN BIOMED, P91
[6] HEILAND G, 1982, SENSOR ACTUATOR, V2, P343, DOI 10.1016/0250-6874(81)80055-8
[7] ELECTROKINETIC AND ADSORPTION STUDIES ON QUARTZ
LI, HC
DEBRUYN, PL
[J]. SURFACE SCIENCE, 1966, 5 (02) : 203 - &
[8] SEMICONDUCTOR GAS SENSORS
MORRISON, SR
[J]. SENSORS AND ACTUATORS, 1982, 2 (04): : 329 - 341
[9] HYDROGEN, CALCIUM, AND POTASSIUM ION-SENSITIVE FET TRANSDUCERS - PRELIMINARY-REPORT
MOSS, SD
JOHNSON, CC
JANATA, J
[J]. IEEE TRANSACTIONS ON BIOMEDICAL ENGINEERING, 1978, 25 (01) : 49 - 54
[10] OESCH U, 1981, ANAL CHEM, V53, P1983, DOI 10.1021/ac00236a008