学术探索
学术期刊
新闻热点
数据分析
智能评审

AUTOMATED GROWTH OF ALXGA1-XAS AND INXGA1-XAS BY MOLECULAR-BEAM EPITAXY USING AN ION GAUGE FLUX MONITOR

被引：6
作者：
WUNDER, R
STALL, R
MALIK, R
WOELFER, S
机构：
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1985年 / 3卷 / 04期
关键词：
D O I：
10.1116/1.583023
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：964 / 967
页数：4
相关论文
共 5 条
[1]   GROWTH OF III-V SEMICONDUCTORS BY MOLECULAR-BEAM EPITAXY AND THEIR PROPERTIES [J].
CHO, AY .
THIN SOLID FILMS, 1983, 100 (04) :291-317
[2]   GAS SOURCE MOLECULAR-BEAM EPITAXY OF GAXIN1-XPYAS1-Y [J].
PANISH, MB ;
SUMSKI, S .
JOURNAL OF APPLIED PHYSICS, 1984, 55 (10) :3571-3576
[3]   THE PREPARATION OF MATERIALS FOR OPTOELECTRONIC APPLICATIONS BY MOLECULAR-BEAM EPITAXY [J].
TSANG, WT .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1984, 2 (02) :409-414
[4]   NEW CURRENT INJECTION 1.5-MU-M WAVELENGTH GAXALYIN1-X-YAS/INP DOUBLE-HETEROSTRUCTURE LASER GROWN BY MOLECULAR-BEAM EPITAXY [J].
TSANG, WT ;
OLSSON, NA .
APPLIED PHYSICS LETTERS, 1983, 42 (11) :922-924
[5]   MAGNESIUM-DOPING AND CALCIUM-DOPING BEHAVIOR IN MOLECULAR-BEAM EPITAXIAL-III-V COMPOUNDS [J].
WOOD, CEC ;
DESIMONE, D ;
SINGER, K ;
WICKS, GW .
JOURNAL OF APPLIED PHYSICS, 1982, 53 (06) :4230-4235
1