MEASUREMENT OF FOWLER-NORDHEIM TUNNELING CURRENTS IN MOS STRUCTURES UNDER CHARGE TRAPPING CONDITIONS

被引：41

作者：

NISSANCOHEN, Y ^{[1
]}

SHAPPIR, J ^{[1
]}

FROHMANBENTCHKOWSKY, D ^{[1
]}

机构：

[1] HEBREW UNIV JERUSALEM,SCH APPL SCI & TECHNOL,DIV APPL PHYS,JERUSALEM,ISRAEL

来源：

SOLID-STATE ELECTRONICS | 1985年 / 28卷 / 07期

关键词：

D O I：

10.1016/0038-1101(85)90022-X

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：717 / 720

页数：4

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