PLASMA-GROWN OXIDES ON SILICON WITH EXTREMELY LOW INTERFACE STATE DENSITIES

被引：10

作者：

KENNEDY, GP ^{[1
]}

TAYLOR, S ^{[1
]}

ECCLESTON, W ^{[1
]}

UREN, MJ ^{[1
]}

机构：

[1] DRA LTD,MALVERN WR14 3PS,WORCS,ENGLAND

来源：

MICROELECTRONICS JOURNAL | 1994年 / 25卷 / 07期

关键词：

D O I：

10.1016/0026-2692(94)90031-0

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Plasma-grown oxides on silicon with midgap interface state densities less than 10(10) cm(-2) eV(-1) have been obtained using low process temperatures )<120 degrees C). Slow and fast interface state densities were measured over a wide frequency range by two different techniques: the quasi-static (CV) and the conductance (G(p)/w) methods. Careful attention to system apparatus design, cleanliness and operation are thought to be the main factors responsible for the low interface trap densities.

引用

页码：485 / 489

页数：5

共 10 条

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