EVIDENCE FOR IN-DEFECT COMPLEXES IN CDTE

被引:23
作者
WEGNER, D [1 ]
MEYER, EA [1 ]
机构
[1] UNIV GOTTINGEN,INST METALLPHYS,D-3400 GOTTINGEN,FED REP GER
关键词
D O I
10.1088/0953-8984/1/32/009
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:5403 / 5410
页数:8
相关论文
共 18 条
[1]   PHOTOLUMINESCENCE IN HIGH-RESISTIVITY CDTE-IN [J].
BARNES, CE ;
ZANIO, K .
JOURNAL OF APPLIED PHYSICS, 1975, 46 (09) :3959-3964
[2]  
FORKEL D, 1983, HYPERFINE INTERACT, V15, P821
[3]   THE EFG AT REGULAR LATTICE SITES IN INX-COMPOUNDS AND PHASE-TRANSITIONS IN IN2S3-SEMICONDUCTORS, IN2SE3-SEMICONDUCTORS, IN2TE3-SEMICONDUCTORS [J].
FRANK, M ;
GUBITZ, F ;
KREISCHE, W ;
LABAHN, A ;
OTT, C ;
ROSELER, B ;
SCHWAB, F ;
WEESKE, G .
HYPERFINE INTERACTIONS, 1987, 34 (1-4) :265-269
[4]   RADIOGENIC SN DEFECTS IN ION-IMPLANTED CDTE [J].
GRANN, H ;
PEDERSEN, FT ;
WEYER, G .
HYPERFINE INTERACTIONS, 1986, 29 (1-4) :1237-1240
[5]   DEEP LEVEL STRUCTURE AND COMPENSATION MECHANISM IN IN-DOPED CDTE CRYSTALS [J].
IDO, T ;
HEURTEL, A ;
TRIBOULET, R ;
MARFAING, Y .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1987, 48 (09) :781-790
[6]  
JAMES F, 1977, CERN PROGR LIBR
[7]   ANNEALING OF INDIUM-IMPLANTED CDTE [J].
KALISH, R ;
DEICHER, M ;
SCHATZ, G .
JOURNAL OF APPLIED PHYSICS, 1982, 53 (07) :4793-4799
[8]   DEFECT STRUCTURE OF CDTE [J].
KROGER, FA .
REVUE DE PHYSIQUE APPLIQUEE, 1977, 12 (02) :205-210
[9]   GROWTH OF SEMI-INSULATING CADMIUM TELLURIDE [J].
KYLE, NR .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (11) :1790-&
[10]   MODELS OF DONOR IMPURITY COMPENSATION IN CADMIUM TELLURIDE [J].
MARFAING, Y .
REVUE DE PHYSIQUE APPLIQUEE, 1977, 12 (02) :211-217