RADIOGENIC SN DEFECTS IN ION-IMPLANTED CDTE

被引：6

作者：

GRANN, H ^{[1
]}

PEDERSEN, FT ^{[1
]}

WEYER, G ^{[1
]}

机构：

[1] CERN,ISOLDE COLLABORAT,CH-1211 GENEVA 23,SWITZERLAND

来源：

HYPERFINE INTERACTIONS | 1986年 / 29卷 / 1-4期

关键词：

D O I：

10.1007/BF02399458

中图分类号：

O64 [物理化学（理论化学）、化学物理学]; O56 [分子物理学、原子物理学];

学科分类号：

070203 ; 070304 ; 081704 ; 1406 ;

摘要：

引用

页码：1237 / 1240

页数：4

共 12 条

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[10] THE LATTICE-DYNAMICS OF SUBSTITUTIONAL TIN ON THE 2 DIFFERENT LATTICE SITES IN III-V COMPOUND SEMICONDUCTORS [J].

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