INTERFACIAL STRUCTURE AND ITS EFFECT ON NUCLEATION AND GROWTH ENERGETICS IN MESOTAXIAL SI/COSI2/SI STRUCTURES

被引：4

作者：

HULL, R

HSIEH, YF

WHITE, AE

SHORT, KT

机构：

来源：

APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 26期

关键词：

D O I：

10.1063/1.105655

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We show how analysis of the stacking sequences at CoSi2/Si interfaces formed by 100 kV Co+ implantation into Si (001) or (111) predicts the formation of partial dislocations or stacking faults at precipitate comers. The presence and nature of the stacking fault can uniquely identify the bonding coordination at the CoSi2/Si(111) interface. Consideration of the interfacial structure for twinned (B) and untwinned (A) {111} interfaces helps explain the competitive nucleation and growth of A vs B precipitates.

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页码：3467 / 3469

页数：3

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