THE COMPATIBILITY OF ALUMINUM LAYERS ON PLASMA-DEPOSITED W AND WSI2 FILMS

被引:3
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FANG, YK
YANG, HM
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D O I
10.1109/16.2518
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TM [电工技术]; TN [电子技术、通信技术];
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0808 ; 0809 ;
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页码:706 / 708
页数:3
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共 14 条
[1]  
AKITMOTO K, 1981, APPL PHYS LETT, V39, P445, DOI 10.1063/1.92733
[2]   ELECTRICAL CHARACTERISTICS OF AL CONTACT TO NISI USING THIN W LAYER AS A BARRIER [J].
BARTUR, M ;
NICOLET, MA .
APPLIED PHYSICS LETTERS, 1981, 39 (10) :822-824
[3]  
BEADLE WE, 1985, QUICK REFERENCE MANU, pCH5
[4]   PEAKED SCHOTTKY-BARRIER SOLAR-CELLS BY AL-SI METALLURGICAL REACTIONS [J].
CARD, HC ;
YANG, ES ;
PANAYOTATOS, P .
APPLIED PHYSICS LETTERS, 1977, 30 (12) :643-645
[5]   STUDY OF AL-PD2SI CONTACTS ON SI [J].
GRINOLDS, H ;
ROBINSON, GY .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (01) :75-78
[6]  
GURP GJ, 1979, J APPL PHYS, V50, P6915
[7]   ALUMINUM-NICKEL SILICIDE CONTACTS ON SILICON [J].
HOKELEK, E ;
ROBINSON, GY .
THIN SOLID FILMS, 1978, 53 (02) :135-140
[8]   ELECTRICAL AND MECHANICAL FEATURES OF PLATINUM SILICIDE-ALUMINUM REACTION [J].
HOSACK, HH .
JOURNAL OF APPLIED PHYSICS, 1973, 44 (08) :3476-3485
[9]  
HUTCHENSON GD, 1986, SEMICONDUCTOR IN JAN, P45
[10]  
MOHAMMADI F, 1980, G5031 STANF U INT CI, P58