INTERNAL PHOTOEMISSION IN GE/SAPPHIRE METAL STRUCTURES

被引：5

作者：

MAILLET, A ^{[1
]}

BALLAND, B ^{[1
]}

PEISNER, J ^{[1
]}

机构：

[1] ECOLE NATL SUPER ELECTR & RADIOELECT,INST NATL POLYTECH,PHYS COMPOSES SEMICOND LAB,CNRS,ER 659,F-38031 GRENOBLE,FRANCE

来源：

THIN SOLID FILMS | 1983年 / 109卷 / 03期

关键词：

D O I：

10.1016/0040-6090(83)90112-8

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：225 / 236

页数：12

共 18 条

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[6] PHOTOEMISSION OF ELECTRONS FROM SILICON AND GOLD INTO SILICON DIOXIDE [J].

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[7]

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[8] HOT-ELECTRONS IN SIO2 [J].

HUGHES, RC .

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[9] CHARGE-CARRIER TRANSPORT PHENOMENA IN AMORPHOUS SIO2 - DIRECT MEASUREMENT OF DRIFT MOBILITY AND LIFETIME [J].

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[10] LUMINESCENCE OF THE F-CENTER IN SAPPHIRE [J].

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