SUPPRESSION OF EXTRANEOUS WALL DEPOSITION BY HCL INJECTION IN HYDRIDE VAPOR-PHASE EPITAXY OF III-V SEMICONDUCTORS

被引：23

作者：

MIZUTANI, T

WATANABE, H

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1982年 / 59卷 / 03期

关键词：

D O I：

10.1016/0022-0248(82)90371-2

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：507 / 515

页数：9

共 18 条

[1] EPITAXIAL DEPOSITION OF SILICON ON QUARTZ [J].

BICKNELL, RW ;

STIRLAND, DJ ;

CHARIG, JM ;

JOYCE, BA .

PHILOSOPHICAL MAGAZINE, 1964, 9 (102) :965-&

[2] THE TRANSPORT OF GALLIUM ARSENIDE IN THE VAPOR PHASE BY CHEMICAL REACTION [J].

FERGUSSON, RR ;

GABOR, T .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1964, 111 (05) :585-592

[3] REACTION EQUILIBRIA IN GROWTH OF GAAS AND GAP BY CHLORIDE TRANSPORT PROCESS [J].

KIRWAN, DJ .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (12) :1572-&

[4] THERMODYNAMIC ANALYSIS FOR INGAASP EPITAXIAL-GROWTH BY THE CHLORIDE-CVD PROCESS [J].

KOUKITU, A ;

SEKI, H .

JOURNAL OF CRYSTAL GROWTH, 1980, 49 (02) :325-333

[5] VAPOR-PHASE GROWTH OF INGAASP-INP DH STRUCTURES BY THE DUAL-GROWTH-CHAMBER METHOD [J].

MIZUTANI, T ;

YOSHIDA, M ;

USUI, A ;

WATANABE, H ;

YUASA, T ;

HAYASHI, I .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (02) :L113-L116

[6] 1.5-1.7 MU-M VPE INGAASP-INP CW LASERS [J].

OLSEN, GH ;

ZAMEROWSKI, TJ ;

DIGIUSEPPE, NJ .

ELECTRONICS LETTERS, 1980, 16 (13) :516-518

[7] LOW-THRESHOLD 1.25-MU-M VAPOR-GROWN INGAASP CW LASERS [J].

OLSEN, GH ;

NUESE, CJ ;

ETTENBERG, M .

APPLIED PHYSICS LETTERS, 1979, 34 (04) :262-264

[8] THERMODYNAMICS OF TYPE-A1-XBXC1-YDY-III-V QUATERNARY SOLID-SOLUTIONS [J].

ONABE, K .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1982, 43 (11) :1071-1086

[9] SELECTIVE GROWTH OF EPITAXIAL SILICON AND GALLIUM ARSENIDE [J].

RAICHOUDHURY, P ;

SCHRODER, DK .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (01) :107-+

[10] VPE GROWTH OF INGAP-INGAAS STRUCTURES FOR TRANSFERRED-ELECTRON PHOTO-CATHODES [J].

SAXENA, RR ;

HYDER, SB ;

GREGORY, PE ;

ESCHER, JS .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (03) :733-737

← 1 2 →