CHARACTERISTICS OF SCHOTTKY DIODES AT 10.6 MU-M

被引：12

作者：

INOUE, N

HARAKAWA, K

YASUOKA, Y

机构：

来源：

APPLIED PHYSICS LETTERS | 1983年 / 42卷 / 03期

关键词：

D O I：

10.1063/1.93910

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：268 / 269

页数：2

共 9 条

[1]

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[7] COMPARISON OF THE RESPONSIVITY OF W-NI POINT CONTACT MBM DIODES WITH W-SI POINT CONTACT SCHOTTKY DIODES [J].

YASUOKA, Y ;

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[8] RESISTANCE DEPENDENCE OF DETECTED SIGNALS OF MOM DIODES [J].

YASUOKA, Y ;

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[9]

YASUOKA Y, 1982, REV LASER ENG, V10, P200

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