EPITAXIAL REGROWTH OF SILICON IMPLANTED WITH ARGON AND BORON

被引：8

作者：

DELFINO, M ^{[1
]}

MILGRAM, A ^{[1
]}

STRATHMAN, MD ^{[1
]}

机构：

[1] CHARLES EVANS & ASSOCIATES,SAN MATEO,CA 94402

来源：

APPLIED PHYSICS LETTERS | 1984年 / 44卷 / 06期

关键词：

D O I：

10.1063/1.94838

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：594 / 596

页数：3

共 6 条

[1] QUANTUM-CHEMICAL MODELING OF BORON AND NOBLE-GAS DOPANTS IN SILICON [J].

ARONOWITZ, S .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (07) :3930-3934

[2]

Chu WK., 1978, BACKSCATTERING SPECT

[3] EPITAXIAL REGROWTH OF AR IMPLANTED AMORPHOUS SI BY LASER ANNEALING [J].

MATTESON, S ;

REVESZ, P ;

FARKAS, G ;

GYULAI, J ;

SHENG, TT .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (05) :2625-2629

[4] EFFECT OF ARGON IMPLANTATION ON THE ACTIVATION OF BORON IMPLANTED IN SILICON [J].

MILGRAM, A ;

DELFINO, M .

APPLIED PHYSICS LETTERS, 1983, 42 (10) :878-880

[5] EPITAXIAL REGROWTH OF AR-IMPLANTED AMORPHOUS SILICON [J].

REVESZ, P ;

WITTMER, M ;

ROTH, J ;

MAYER, JW .

JOURNAL OF APPLIED PHYSICS, 1978, 49 (10) :5199-5206

[6] LASER ANNEALING OF SILICON IMPLANTED WITH BOTH ARGON AND ARSENIC [J].

RIMINI, E ;

CHU, WK ;

BAGLIN, JEE ;

TAN, TY ;

HODGSON, RT .

APPLIED PHYSICS LETTERS, 1980, 37 (01) :81-83

← 1 →