EFFECT OF ARGON IMPLANTATION ON THE ACTIVATION OF BORON IMPLANTED IN SILICON

被引：9

作者：

MILGRAM, A ^{[1
]}

DELFINO, M ^{[1
]}

机构：

[1] FAIRCHILD CAMERA & INSTRUMENT CORP,ADV RES & DEV LAB,PALO ALTO,CA 94304

来源：

APPLIED PHYSICS LETTERS | 1983年 / 42卷 / 10期

关键词：

D O I：

10.1063/1.93772

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：878 / 880

页数：3

共 11 条

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[5]

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[7] INFLUENCE OF O-16, C-12, N-14, AND NOBLE-GASES ON CRYSTALLIZATION OF AMORPHOUS SI LAYERS [J].

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[8] LASER-BEAM ANNEALING OF HEAVILY DAMAGED IMPLANTED LAYERS ON SILICON [J].

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[9]

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[10] EPITAXIAL REGROWTH OF AR-IMPLANTED AMORPHOUS SILICON [J].

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JOURNAL OF APPLIED PHYSICS, 1978, 49 (10) :5199-5206

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