EPITAXIAL REGROWTH OF AR IMPLANTED AMORPHOUS SI BY LASER ANNEALING

[1] DIRECT MEASUREMENTS OF THE SURFACE ENERGIES OF CRYSTALS [J]. JOURNAL OF APPLIED PHYSICS, 1960, 31 (12) : 2208 - 2218

[2] SURFACE TENSION AT ELEVATED TEMPERATURES .1. FURNACE AND METHOD FOR USE OF THE SESSILE DROP METHOD - SURFACE TENSION OF SILICON, IRON AND NICKEL [J]. JOURNAL OF PHYSICAL CHEMISTRY, 1953, 57 (03) : 359 - 363

[3] LAU SH, COMMUNICATION

[4] LAU SS, 1979, 1978 INT C LAS SOL I, P84

[5] EPITAXIAL REGROWTH OF AR-IMPLANTED AMORPHOUS SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (10) : 5199 - 5206

[6] RIMINI E, UNPUBLISHED

[7] Seidel T. E., 1975, Lattice Defects in Semiconductors, 1974, P494

[8] GRAIN-SIZE DEPENDENCE IN A SELF-IMPLANTED SILICON LAYER ON LASER IRRADIATION ENERGY DENSITY [J]. APPLIED PHYSICS LETTERS, 1978, 32 (12) : 824 - 826

[9] REDISTRIBUTION OF DOPANTS IN ION-IMPLANTED SILICON BY PULSED-LASER ANNEALING [J]. APPLIED PHYSICS LETTERS, 1978, 33 (07) : 662 - 664

[10] WHITE CW, 1979, 1978 INT C LAS SOL I, P275

[1] DIRECT MEASUREMENTS OF THE SURFACE ENERGIES OF CRYSTALS [J]. JOURNAL OF APPLIED PHYSICS, 1960, 31 (12) : 2208 - 2218

[2] SURFACE TENSION AT ELEVATED TEMPERATURES .1. FURNACE AND METHOD FOR USE OF THE SESSILE DROP METHOD - SURFACE TENSION OF SILICON, IRON AND NICKEL [J]. JOURNAL OF PHYSICAL CHEMISTRY, 1953, 57 (03) : 359 - 363

[3] LAU SH, COMMUNICATION

[4] LAU SS, 1979, 1978 INT C LAS SOL I, P84

[5] EPITAXIAL REGROWTH OF AR-IMPLANTED AMORPHOUS SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (10) : 5199 - 5206

[6] RIMINI E, UNPUBLISHED

[7] Seidel T. E., 1975, Lattice Defects in Semiconductors, 1974, P494

[8] GRAIN-SIZE DEPENDENCE IN A SELF-IMPLANTED SILICON LAYER ON LASER IRRADIATION ENERGY DENSITY [J]. APPLIED PHYSICS LETTERS, 1978, 32 (12) : 824 - 826

[9] REDISTRIBUTION OF DOPANTS IN ION-IMPLANTED SILICON BY PULSED-LASER ANNEALING [J]. APPLIED PHYSICS LETTERS, 1978, 33 (07) : 662 - 664

[10] WHITE CW, 1979, 1978 INT C LAS SOL I, P275