INFLUENCE OF IMPLANT INDUCED VACANCIES AND INTERSTITIALS ON BORON-DIFFUSION IN SILICON

被引:41
作者
SOLMI, S [1 ]
ANGELUCCI, R [1 ]
CEMBALI, F [1 ]
SERVIDORI, M [1 ]
ANDERLE, M [1 ]
机构
[1] IST RIC SCI & TECNOL,DIV SCI MAT,I-38050 POVO,ITALY
关键词
D O I
10.1063/1.98431
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:331 / 333
页数:3
相关论文
共 15 条
[1]   TRANSIENT ENHANCED DIFFUSION OF DOPANTS IN SILICON INDUCED BY IMPLANTATION DAMAGE [J].
ANGELUCCI, R ;
NEGRINI, P ;
SOLMI, S .
APPLIED PHYSICS LETTERS, 1986, 49 (21) :1468-1470
[2]   DOUBLE-CRYSTAL X-RAY-DIFFRACTION ANALYSIS OF LOW-TEMPERATURE ION-IMPLANTED SILICON [J].
CEMBALI, F ;
SERVIDORI, M ;
ZANI, A .
SOLID-STATE ELECTRONICS, 1985, 28 (09) :933-&
[3]  
DROWLWY CI, 1985, MATER RES SOC S P, V35, P375
[4]   KINETICS OF THERMAL NITRIDATION PROCESSES IN THE STUDY OF DOPANT DIFFUSION MECHANISMS IN SILICON [J].
FAHEY, P ;
BARBUSCIA, G ;
MOSLEHI, M ;
DUTTON, RW .
APPLIED PHYSICS LETTERS, 1985, 46 (08) :784-786
[5]  
FAHEY P, 1986, SEMICONDUCTOR SILICO, V86, P571
[6]  
GUIMARAES S, 1986, PHYS STATUS SOLIDI A, V95, P761
[7]   ELECTRICAL CHARACTERIZATION OF P+/N SHALLOW JUNCTIONS OBTAINED BY BORON IMPLANTATION INTO PREAMORPHIZED SILICON [J].
LANDI, E ;
SOLMI, S .
SOLID-STATE ELECTRONICS, 1986, 29 (11) :1181-1187
[8]   DEFECT DISTRIBUTION IN ION-IMPLANTED SILICON - A MONTE-CARLO SIMULATION [J].
MAZZONE, AM .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1986, 95 (01) :149-154
[9]  
MICHEL AE, 1986, MATER RES SOC S P, V52, P3
[10]  
MOREHEAD FF, 1985, MATER RES SOC S P, V35, P341