ELECTRICAL CHARACTERIZATION OF P+/N SHALLOW JUNCTIONS OBTAINED BY BORON IMPLANTATION INTO PREAMORPHIZED SILICON

被引：25

作者：

LANDI, E

SOLMI, S

机构：

来源：

SOLID-STATE ELECTRONICS | 1986年 / 29卷 / 11期

关键词：

D O I：

10.1016/0038-1101(86)90062-6

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1181 / 1187

页数：7

共 21 条

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