THEORY OF DEFECTS IN AMORPHOUS-SEMICONDUCTORS

[1] ORIGIN OF THE PHOTOINDUCED CHANGES IN HYDROGENATED AMORPHOUS-SILICON [J]. SOLAR CELLS, 1983, 9 (1-2): : 133 - 148

[2] ELECTRONIC STATES AND TOTAL ENERGIES IN HYDROGENATED AMORPHOUS-SILICON [J]. PHYSICAL REVIEW B, 1982, 25 (02) : 1065 - 1080

[3] ASGA ANTISITE DEFECT IN GAAS [J]. PHYSICAL REVIEW B, 1983, 27 (04): : 2545 - 2547

[4] CORRELATION-ENERGY OF DEEP LEVEL TRAPS IN A-SI-H [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1985, 77-8 : 99 - 102

[5] BERNHOLC J, 1985, J ELECTRON MATER A, V14, P781

[6] LIGHT-INDUCED DANGLING BONDS IN HYDROGENATED AMORPHOUS-SILICON [J]. APPLIED PHYSICS LETTERS, 1981, 38 (06) : 456 - 458

[7] LOCALIZED STATES AND THE ELECTRONIC-PROPERTIES OF A HYDROGENATED DEFECT IN AMORPHOUS-SILICON [J]. PHYSICAL REVIEW B, 1983, 28 (06): : 3246 - 3257

[8] LOCAL ORDER IN AMORPHOUS-III-V COMPOUNDS A1-XBX BY ELECTRON-DIFFRACTION, IN RELATION WITH ELECTRONIC-PROPERTIES [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1984, 17 (13): : 2271 - 2281

[9] DEFECT STATES IN AMORPHOUS SILICON [J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1978, 38 (04): : 325 - 334

[10] DANGLING BONDS IN MEMORY-QUALITY SILICON-NITRIDE FILMS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (02) : 398 - 402

[1] ORIGIN OF THE PHOTOINDUCED CHANGES IN HYDROGENATED AMORPHOUS-SILICON [J]. SOLAR CELLS, 1983, 9 (1-2): : 133 - 148

[2] ELECTRONIC STATES AND TOTAL ENERGIES IN HYDROGENATED AMORPHOUS-SILICON [J]. PHYSICAL REVIEW B, 1982, 25 (02) : 1065 - 1080

[3] ASGA ANTISITE DEFECT IN GAAS [J]. PHYSICAL REVIEW B, 1983, 27 (04): : 2545 - 2547

[4] CORRELATION-ENERGY OF DEEP LEVEL TRAPS IN A-SI-H [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1985, 77-8 : 99 - 102

[5] BERNHOLC J, 1985, J ELECTRON MATER A, V14, P781

[6] LIGHT-INDUCED DANGLING BONDS IN HYDROGENATED AMORPHOUS-SILICON [J]. APPLIED PHYSICS LETTERS, 1981, 38 (06) : 456 - 458

[7] LOCALIZED STATES AND THE ELECTRONIC-PROPERTIES OF A HYDROGENATED DEFECT IN AMORPHOUS-SILICON [J]. PHYSICAL REVIEW B, 1983, 28 (06): : 3246 - 3257

[8] LOCAL ORDER IN AMORPHOUS-III-V COMPOUNDS A1-XBX BY ELECTRON-DIFFRACTION, IN RELATION WITH ELECTRONIC-PROPERTIES [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1984, 17 (13): : 2271 - 2281

[9] DEFECT STATES IN AMORPHOUS SILICON [J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1978, 38 (04): : 325 - 334

[10] DANGLING BONDS IN MEMORY-QUALITY SILICON-NITRIDE FILMS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (02) : 398 - 402