EXTENDED MOMENT EQUATIONS FOR ELECTRON-TRANSPORT IN SEMICONDUCTING SUB-MICRON STRUCTURES

被引：26

作者：

BRINGER, A ^{[1
]}

SCHON, G ^{[1
]}

机构：

[1] DELFT UNIV TECHNOL, CTR SUBMICRON TECHNOL, 2628 CJ DELFT, NETHERLANDS

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 64卷 / 05期

关键词：

D O I：

10.1063/1.341680

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2447 / 2455

页数：9

共 18 条

[11] MEASUREMENT OF J/V CHARACTERISTICS OF A GAAS SUB-MICRON N+-N--N+ DIODE [J].

HOLLIS, MA ;

EASTMAN, LF ;

WOOD, CEC .

ELECTRONICS LETTERS, 1982, 18 (13) :570-572

[12] THE MONTE-CARLO METHOD FOR THE SOLUTION OF CHARGE TRANSPORT IN SEMICONDUCTORS WITH APPLICATIONS TO COVALENT MATERIALS [J].

JACOBONI, C ;

REGGIANI, L .

REVIEWS OF MODERN PHYSICS, 1983, 55 (03) :645-705

[13] INJECTED-HOT-ELECTRON TRANSPORT IN GAAS [J].

LEVI, AFJ ;

HAYES, JR ;

PLATZMAN, PM ;

WIEGMANN, W .

PHYSICAL REVIEW LETTERS, 1985, 55 (19) :2071-2073

[14] A DISPLACED MAXWELLIAN APPROACH TO BALLISTIC ELECTRON-TRANSPORT IN SEMICONDUCTORS [J].

ROSENCHER, E .

SOLID STATE COMMUNICATIONS, 1981, 38 (12) :1293-1295

[15]

SELBERHERR S, 1984, ANAL SIMULATIONS SEM

[16] IONIZED IMPURITY SCATTERING IN MONTE-CARLO CALCULATIONS [J].

VANDEROER, TG ;

WIDDERSHOVEN, FP .

JOURNAL OF APPLIED PHYSICS, 1986, 59 (03) :813-815

[17]

VANDEROER TG, 1982, P WORKSHOP PHYSICS S

[18] ELECTRON-ELECTRON SCATTERING IN NONDEGENERATE SEMICONDUCTORS - DRIVING THE ANISOTROPIC DISTRIBUTION TOWARD A DISPLACED MAXWELLIAN [J].

WINGREEN, NS ;

STANTON, CJ ;

WILKINS, JW .

PHYSICAL REVIEW LETTERS, 1986, 57 (08) :1084-1087

← 1 2 →