PROPERTIES OF SELECTIVE LOW-PRESSURE CHEMICALLY VAPOR-DEPOSITED TUNGSTEN FILMS PRODUCED BY HYDROGEN REDUCTION IN A COLD WALL SYSTEM

[1] SELECTIVE LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION OF TUNGSTEN [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (06) : 1427 - 1433

[2] CHOW R, 1985, TUNGSTEN WORKSHOP, P137

[3] FOSTER RF, 1986, TUNGSTEN WORKSHOP, P147

[4] STRUCTURE OF SELECTIVE LOW-PRESSURE CHEMICALLY VAPOR-DEPOSITED FILMS OF TUNGSTEN [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (05) : 1243 - 1250

[5] JOSHI RV, 1986, MRS P, V71, P309

[6] LEAN AJ, 1985, J APPL PHYS, V58, P2001

[7] INTERFACIAL STRUCTURE OF TUNGSTEN LAYERS FORMED BY SELECTIVE LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (02) : 444 - 448

[8] Wilson R. H., 1985, 1985 Proceedings of the Second International IEEE VLSI Multilevel Interconnection Conference (Cat. No.85CH2197-2), P343

[1] SELECTIVE LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION OF TUNGSTEN [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (06) : 1427 - 1433

[2] CHOW R, 1985, TUNGSTEN WORKSHOP, P137

[3] FOSTER RF, 1986, TUNGSTEN WORKSHOP, P147

[4] STRUCTURE OF SELECTIVE LOW-PRESSURE CHEMICALLY VAPOR-DEPOSITED FILMS OF TUNGSTEN [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (05) : 1243 - 1250

[5] JOSHI RV, 1986, MRS P, V71, P309

[6] LEAN AJ, 1985, J APPL PHYS, V58, P2001

[7] INTERFACIAL STRUCTURE OF TUNGSTEN LAYERS FORMED BY SELECTIVE LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (02) : 444 - 448

[8] Wilson R. H., 1985, 1985 Proceedings of the Second International IEEE VLSI Multilevel Interconnection Conference (Cat. No.85CH2197-2), P343