FIELD INFLUENCE ON DEEP LEVEL TRANSIENTS AT LARGE DEEP TO SHALLOW TRAP RATIOS

被引：12

作者：

MORANTE, JR

SAMITIER, J

CORNET, A

HERMS, A

机构：

[1] Univ de Barcelona, Facultat de, Fisica, Barcelona, Spain, Univ de Barcelona, Facultat de Fisica, Barcelona, Spain

来源：

APPLIED PHYSICS LETTERS | 1984年 / 45卷 / 12期

关键词：

D O I：

10.1063/1.95133

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1317 / 1319

页数：3

共 11 条

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SAH, CT .

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[2] A NOVEL TECHNIQUE FOR STUDYING ELECTRIC-FIELD EFFECT OF CARRIER EMISSION FROM A DEEP LEVEL CENTER [J].

LI, GP ;

WANG, KL .

APPLIED PHYSICS LETTERS, 1983, 42 (09) :838-840

[3]

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[4] EFFECT OF ELECTRIC-FIELD ON DEEP-LEVEL TRANSIENTS IN GAAS AND GAP [J].

MAKRAMEBEID, S .

APPLIED PHYSICS LETTERS, 1980, 37 (05) :464-466

[5]

MAKRAMEBEID S, 1982, PHYS REV LETT, V48, P9281

[6] ELECTRIC-FIELD ENHANCED EMISSION FROM NON-COULOMBIC TRAPS IN SEMICONDUCTORS [J].

MARTIN, PA ;

STREETMAN, BG ;

HESS, K .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (12) :7409-7415

[7]

MIRCEA A, 1979, J PHYS LETT-PARIS, V40, pL31, DOI 10.1051/jphyslet:0197900400203100

[8] DEPENDENCE OF THE ELECTRON CROSS-SECTION FOR THE ACCEPTOR GOLD LEVEL IN SILICON ON THE GOLD TO DONOR RATIO [J].

MORANTE, JR ;

CARCELLER, JE ;

HERMS, A ;

CARTUJO, P ;

BARBOLLA, J .

APPLIED PHYSICS LETTERS, 1982, 41 (07) :656-658

[9] STUDY OF ELECTRIC-FIELD ENHANCED EMISSION OF DEEP LEVELS USING A NEW EMISSION SPECTROSCOPIC TECHNIQUE [J].

NGUYEN, TT ;

WANG, KL ;

LI, GP .

APPLIED PHYSICS LETTERS, 1984, 44 (02) :211-213

[10]

SAMITIER J, 1984, THESIS U BARCELONA

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