共 21 条
[1]
THERMAL CAPTURE CROSS-SECTION OF FREE-ELECTRONS AT NEUTRAL GOLD CENTERS IN N-TYPE SILICON
[J].
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH,
1976, 36 (02)
:495-498
[4]
LIFETIMES AND CAPTURE CROSS SECTIONS IN GOLD-DOPED SILICON
[J].
PHYSICAL REVIEW,
1959, 114 (04)
:1006-1008
[7]
WAVE-FUNCTIONS AND OPTICAL CROSS-SECTIONS ASSOCIATED WITH DEEP CENTERS IN SEMICONDUCTORS
[J].
PHYSICAL REVIEW B,
1977, 16 (08)
:3694-3706
[8]
DETERMINATION OF CAPTURE RATE CN OF GOLD ACCEPTOR LEVEL FROM SINGLE INJECTION N+-I-N+ SILICON SCLC DIODES
[J].
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH,
1974, 25 (01)
:131-139
[9]
DETERMINATION OF TEMPERATURE INDEPENDENCE OF CAPTURE CROSS-SECTION OF GOLD ACCEPTOR LEVEL FOR ELECTRONS IN N-TYPE SILICON
[J].
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH,
1975, 30 (01)
:141-146
[10]
COMPLEX NATURE OF GOLD-RELATED DEEP LEVELS IN SILICON
[J].
PHYSICAL REVIEW B,
1980, 22 (08)
:3917-3934