AMORPHOUS-SILICON PRODUCED BY A NEW THERMAL CHEMICAL VAPOR-DEPOSITION METHOD USING INTERMEDIATE SPECIES SIF2

被引：112

作者：

MATSUMURA, H

TACHIBANA, H

机构：

来源：

APPLIED PHYSICS LETTERS | 1985年 / 47卷 / 08期

关键词：

D O I：

10.1063/1.96000

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：833 / 835

页数：3

共 9 条

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