IN0.53GA0.47AS/ALAS RESONANT-TUNNELING DIODES WITH SWITCHING TIME OF 1.5PS

被引：60

作者：

SHIMIZU, N

NAGATSUMA, T

WAHO, T

SHINAGAWA, M

YAITA, M

YAMAMOTO, M

机构：

[1] NTT LSI Laboratories, Atsugi-shi, Kanagawa 243-01

来源：

ELECTRONICS LETTERS | 1995年 / 31卷 / 19期

关键词：

GALLIUM INDIUM ARSENIDE; RESONANT TUNNELING DEVICES;

D O I：

10.1049/el:19951102

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Switching times of 1.5ps for In0.53Ga0.47As/AlAs resonant tunnelling diodes (RTDs) with 1.1 nm wide barriers and a peak current density of 6.8 x 10(5) A/cm(2) are reported. To the authors' knowledge, this is the fastest switching ever reported for any type of RTD. The authors confirm that the obtained switching time is close to the value calculated from the experimentally derived depletion-layer capacitance and average negative differential resistance.

引用

页码：1695 / 1697

页数：3

共 5 条

[1] RESONANT TUNNELING DIODES FOR SWITCHING APPLICATIONS [J].