PICOSECOND-SWITCHING TIME OF IN0.53GA0.47AS/ALAS RESONANT-TUNNELING DIODES MEASURED BY ELECTROOPTIC SAMPLING TECHNIQUE

被引：23

作者：

SHIMIZU, N

NAGATSUMA, T

SHINAGAWA, M

WAHO, T

机构：

[1] NTT LSI Laboratories

来源：

IEEE ELECTRON DEVICE LETTERS | 1995年 / 16卷 / 06期

关键词：

D O I：

10.1109/55.790729

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

To demonstrate picosecond-switching time for In0.53Ga0.47As/AlAs resonant-tunneling diodes (RTD's), we fabricated RTD's with various barrier widths and measured their switching times using electro-optic sampling technique specially arranged for RTD's with high current density. For an RTD having the barrier width of 1.4 nm with the peak current density of 4.5 x 10(5) A/cm(2) and peak-to-valley ratio of 3.9, the switching time of 2.2 ps has been observed.

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页码：262 / 264

页数：3

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